The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2001
Filed:
Sep. 25, 2000
Hiroaki Takahashi, Tokyo, JP;
Masaru Seto, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing read-only memory. In each memory cell on a wafer, a gate electrode,is formed on a silicon substrate,with an intermediary of a gate oxide film,, and an oxide film,is formed to cover the surface of the silicon substrate. After an inter-layer dielectric film,is grown on the oxide film,by LPCVD, this inter-layer dielectric film,is put to rapid thermal processing at 700° C. to 800° C. for about 60 seconds to remove the water content of the inter-layer dielectric film,. This eliminates chances of insulation deterioration when semi-finished wafers are put into long-term storage. After the steps just before data writing have been finished, the wafers can be put into long-term storage, so that time from decision of data to write until product completion can be reduced.