The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2001

Filed:

Nov. 20, 1998
Applicant:
Inventor:

Dae-sig Kim, Sungnam, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/640 ;
U.S. Cl.
CPC ...
C23C 1/640 ;
Abstract

A method for forming a PZT (lead zirconate titanate: Pb(Zr,Ti,)O,) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.


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