The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
May. 21, 1999
Applicant:
Inventors:
Assignee:
Mausushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/128 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/128 ; H01L 2/144 ;
Abstract
In producing a thin film transistor used for such devices as a large-sized liquid crystal display panel with a high pixel density, a leftover of an insulating film caused by insufficient etching and a loss of a semiconductor layer caused by overetching are prevented, and a reliable electrical contact between the source and drain electrodes and the semiconductor layer is achieved. These are achieved by (a) forming a contact hole region of a silicon film so that the region has a larger thickness, for example, by making the film to have a plurality of layers, and (b) providing a silicide layer between an electrode metal and the semiconductor layer.