The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
Mar. 29, 2000
U.S. Philips Corporation, New York, NY (US);
Abstract
A semiconductor body (,) is provided having a first semiconductor region (,) of one conductivity type separated from a first major surface (,) by a second semiconductor region (,) of the opposite conductivity type. A trench (,) is etched through the second semiconductor region (,) to an etch stop layer (,) provided in the region of the pn junction between the first (,) and second (,) regions, by using an etching process which enables the etching process to be stopped at the etch stop layer. A gate (,) is provided within the trench (,). A source (,) separated from the first region (,) by the second region (,) is formed adjacent the trench so that a conduction channel area (,) of the second region (,) adjacent the trench provides a conduction path between the source and first regions which is controllable by the gate.