The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2001
Filed:
Nov. 17, 1999
Isik C. Kizilyalli, Orlando, FL (US);
Sailesh M. Merchant, Orlando, FL (US);
Joseph R. Radosevich, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The present invention provides a method of forming a metal oxide metal (MOM) capacitor over a semiconductor wafer. The method may include forming a first metal layer over the semiconductor wafer, forming a metal silicide layer, such as a tungsten silicide, silicide nitride or a refractory metal silicide, over the first metal layer and forming an oxide layer over the metal silicide layer. The metal silicide layer, which in an advantageous embodiment may be tungsten silicide nitride, resists the corrosive effects of deglazing that may be conducted on other portions of the wafer and is substantially unaffected by the deglazing process, unlike titanium nitride (TiN). The semiconductor device is completed by forming a second metal layer over the oxide layer.