The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Dec. 21, 2000
Hyun Taek Jung, Seoul, KR;
Gyu Hong Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
In a semiconductor memory device having redundancy capability, a control signal generating circuit is included respectively for each of a predetermined number of redundant column select signal lines, to generate a predetermined number of block control signals by dividing a plurality of memory cell array blocks into a predetermined number of groups. A predetermined number of defective enable signal generating circuits are included for each of the redundant column select signal lines, to generate a predetermined number of redundant enable signals when defective addresses are input. The redundant column select signal lines are established for defective addresses based on the block control signals. A selection circuit is included respectively for each of the redundant column select signal lines to generate a select signal for selecting a redundant column select signal line corresponding to each of a predetermined number of redundant enable signals, in response to the block control signals. The efficiency of redundancy is thus improved by performing a redundancy operation by dividing a plurality of memory cell arrays into a predetermined number of groups for each of redundant column select signals.