The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Oct. 14, 1999
Applicant:
Inventors:
Bill Yowjuang Liu, San Jose, CA (US);
Paul R. Besser, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A semiconductor arrangement and method of forming silicide regions includes conformally depositing a reducing material layer on a silicon substrate. A refractory metal layer is then conformally deposited on the reducing material layer. Annealing is then performed to form a refractory metal silicide layer on the silicon substrate. The metal silicide layer is a cobalt silicide and the reducing material layer includes at least one of tantalum, magnesium, aluminum or calcium. The reducing material reduces native oxide on a silicon substrate to allow the cobalt silicide to form.