The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Feb. 24, 1999
Takeshi Fukuda, Takatsuki-shi, Osaka, JP;
Hiroshi Takenaka, Nagaokakyo-shi, Kyoto, JP;
Hidetoshi Furukawa, Suita-shi, Osaka, JP;
Takeshi Fukui, Suita-shi, Osaka, JP;
Daisuke Ueda, Ibaraki-shi, Osaka, JP;
Other;
Abstract
A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.