The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Apr. 14, 2000
Applicant:
Inventor:
Koji Kishimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A STI process for a semiconductor device includes the steps of depositing a SiOxCy film where x<2 in a trench by using a biased high-density-plasma-enhanced CVD system, and heat treating the SiOxCy film in an oxidizing ambient to remove carbon and voids therein to form a stoichiometric SiO,film without causing volume expansion. The depositing step uses a higher ratio of deposited film/sputter-etched film for avoiding plasma damages to the silicon substrate.