The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Sep. 09, 1999
Yeh-Sen Lin, Pa-Te, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The invention advantageously provides a novel method for making self-aligned contacts on a semiconductor substrate. A gate electrode having a vertical sidewall and a protecting layer thereon is formed over the semiconductor substrate. A doped region is formed in the substrate adjacent to the gate electrode. An insulating sidewall spacer is formed on the sidewall of the gate electrode. A second doped region is formed in the substrate adjacent to the sidewall spacer. A second protecting layer is formed to cover or blanket the first protecting layer, the sidewall spacer, and the substrate. An interlayer insulting layer is provided on the second protecting layer in order to form a planer surface. The interlayer insulating layer and the second protecting layer are etched to expose the doped regions to form the self-aligned contacts.