The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
May. 02, 2000
Wei-Ray Lin, Taipei, TW;
Nanya Technology Corporation, , TW;
Abstract
A method for producing capacitor-node contact plugs of a dynamic random access memory, comprising: providing a semiconductor substrate; forming at least one gate structure separated by a first isolation layer as a word line, and forming a source region and a drain region next to the word line; forming a second isolation layer to cover the first isolation layer, word line, source region, and drain region; forming a first landing pad, which passes through the second isolation layer and couples to the source region, wherein the first landing pad is offset a given distance along the word line; forming a third isolation layer to cover the second isolation layer and the first landing pad; forming a second landing pad coupled to the drain region through the second isolation layer and the third isolation layer; forming at least one bit line separated by a fourth isolation layer along the vertical direction to the word line, wherein the at least one bit line is coupled to the second landing pad; forming a fifth isolation layer to cover the at least one bit line separated by the fourth isolation layer; and forming a capacitor-node contact plug, which is coupled to the side wall and a part of the top of the first landing pad through the fifth isolation layer, the third isolation layer, and the second isolation layer.