The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Jan. 15, 1999
Dram cell formed on an insulating layer having a vertical channel and a manufacturing method thereof
Abstract
A semiconductor memory device has a plurality of memory cells arranged in a matrix array, wherein each memory cell has a transistor and a capacitor and the transistor includes a vertical channel. The each memory cell includes a first junction region surrounded by the field oxide layer; a vertical channel including side surfaces, an upper portion and a lower portion, the lower portion of the vertical channel coupled to the first junction region; a second junction region coupled to the upper potion of the vertical channel; a gate electrode surrounding the side surfaces of the vertical channel and including a gate insulator located between the gate electrode and the side surfaces of the vertical channel; a charge storage electrode containing side surfaces, an upper portion and lower portion, the upper potion of the charge storage electrode coupled to the first junction region; a dielectric layer formed on the lower porion and the side surfaces of the charge storage electrode; and a plate electrode entirely surrounding the dielectric layer.