The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2001

Filed:

Jun. 30, 2000
Applicant:
Inventors:

Ik-Soo Choi, Kyoungki-Do, KR;

Byoung-Ju Kang, Kyoungki-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
U.S. Cl.
CPC ...
H01L 2/18234 ; H01L 2/18244 ;
Abstract

A method for fabricating a resistive load static random access memory (SRAM) capable of providing a high resistive load without local resistance variation, includes a step of forming an isolated layer on a semiconductor substrate having driver and access transistors provided thereto, a step of selectively etching said isolated layer to provide a butting contact region, a step of forming a doped polysilicon layer on a resulting structure, a step of selectively counter-doping said doped polysilicon layer, and a step of patterning said doped polysilicon layer to provide a power supply line, a butting contact and a high load resistor.


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