The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Apr. 11, 2000
Applicant:
Inventor:
Hajime Matsuda, Yamanashi, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1338 ; H01L 2/1336 ;
Abstract
A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.