The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Jun. 01, 2000
Christopher D. W. Jones, New Providence, NJ (US);
Donald W. Murphy, Green Brook, NJ (US);
John A. Rogers, New Providence, NJ (US);
Jennifer Tate, Columbus, OH (US);
Richart E. Slusher, Lebanon, NJ (US);
Agere Systems Guardian Corp., Allentown, PA (US);
Abstract
A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile