The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Aug. 22, 2000
Morley M. Blouke, Portland, OR (US);
Brian L. Corrie, Gaston, OR (US);
Scientific Imaging Technologies, Inc., Tigard, OR (US);
Abstract
A semiconductor device, such as a back side illuminated CCD, is fabricated by forming an insulating layer over the front side of a body of semiconductor material, depositing a layer of high resistivity material over the front side of the insulating layer, patterning a portion of the layer of high resistivity material to form a long and narrow trace, and attaching a support member to the front side of the insulating layer. In the case of a back side illuminated CCD, the patterning of the layer of high resistivity material advantageously forms a long and narrow trace substantially confined to a peripheral area of the front side of the insulating layer and the semiconductor material is removed from the corresponding peripheral area of the back side of the insulating layer, leaving a plateau of semiconductor material that does not extend over the area that contains the long and narrow trace.