The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2001

Filed:

Aug. 23, 1999
Applicant:
Inventors:

Masanobu Ishida, Kokubu, JP;

Shigeki Yamada, Kokubu, JP;

Yasuhiko Yoshihara, Kokubu, JP;

Masamitsu Onitani, Kokubu, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/03 ; H05K 1/05 ; B32B 1/504 ;
U.S. Cl.
CPC ...
H05K 1/03 ; H05K 1/05 ; B32B 1/504 ;
Abstract

A wiring board having an insulating substrate of aluminum oxide ceramics and a surface wiring layer formed on the surface of said insulating substrate, wherein the aluminum oxide ceramics constituting said insulating substrate contains a manganese compound in an amount of from 2.0 to 10.0% by weight in terms of MnO,, and has a relative density of not smaller than 95%, and said surface wiring layer contains copper in an amount of from 10 to 70% by volume and at least one high-melting metal selected from the group consisting of tungsten and molybdenum in an amount of from 30 to 90% by volume, and further contains copper as a matrix, said copper matrix having a diffusion structure in which are diffused the particles of said high-melting metal having an average particle diameter of from 1 to 10 &mgr;m. The wiring board is prepared by co-firing the conducting paste for forming the surface wiring layer and the green sheet for forming the insulating substrate, and exhibits excellent heat conductivity and electric properties, and is particularly effectively used for the semiconductor devices that execute arithmetic operations at high speeds.


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