The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2001
Filed:
Dec. 13, 1999
Atsuo Hattori, Hamamatsu, JP;
Chiharu Iriguchi, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
A method of manufacturing a field emission element comprises steps of: (a) forming a base layer comprising a gate film being capable of chemical reaction accompanied by volume expansion; (b) forming an insulating film on said base layer; (c) forming a taper-shaped first hole in said insulating film; (d) forming a second hole in said gate film by anisotropically etching said gate film using said insulating film as a mask; (e) reacting a part of a surface layer of said gate film to form a volume-expanded film by chemical reaction; (f) forming an emitter film made of an electrically conductive material on said insulating film and said expanded film; and (g) exposing said emitter film and said gate film by removing unnecessary parts comprising said substrate and said expanded film.