The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Jun. 28, 2000
Kanji Osari, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
There is provided a semiconductor memory device using a three-layer gate electrode material film to improve yields and reliability, and a method for producing the same. A floating gate,of a memory transistor MT is formed of a first-layer gate electrode material film L,, and a control gate,is formed of a laminated film of second-layer and third-layer gate electrode material films L,and L,. A gate electrode,of a selecting gate transistor ST is formed of the first-layer gate electrode material film L,, and the second-layer and third-layer gate electrode material films L,and L,which are stacked thereon via an interlayer dielectric film,. The third-layer gate electrode material film L,contacts the first-layer gate electrode material film L,via an opening,. A gate electrode,of a peripheral circuit transistor Q is formed of the laminated film of the second-layer and third-layer gate electrode material films L,and L