The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Sep. 16, 1998
Applicant:
Inventor:
Kenji Okada, Osaka, JP;
Assignee:
Matsushita Electronics Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 2/760 ;
U.S. Cl.
CPC ...
G01N 2/760 ;
Abstract
A stressing voltage is applied to a dielectric film (step S,). An A-SILC is monitored with stressing time and is plotted on a log-log scale (step S,). A straight line is applied to the plotting, a stressing time at which the line crosses a predetermined value of the A-SILC (a breakdown threshold) is obtained, and the obtained stressing time is predicted as the lifetime of the dielectric film (step S,).