The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Mar. 07, 2000
Yoshio Manabe, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A field-programmable gate array of the present invention includes a program element for connecting/disconnecting first and second basic cells to/from each other responsive to a program externally input and for storing thereon the connection or disconnection state between the first and second cells. The program element includes: a switching device implemented as a CMOS circuit; and a nonvolatile memory device, which stores thereon the ON/OFF states of the switching device and includes a lower electrode, a capacitive insulating film made of a ferroelectric thin film, and an upper electrode. A first interlevel insulating film is formed over the switching device. And a buffer layer for matching a lattice constant of the first interlevel insulating film with that of the ferroelectric thin film is formed on the first interlevel insulating film.