The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Jan. 13, 1999
Chia C. Chang, Berkeley Heights, NJ (US);
Robert Eugene Frahm, Flemington, NJ (US);
Keon M. Lee, Bellemead, NJ (US);
Orval George Lorimor, Wolfeboro, NH (US);
Dennis Ronald Zolnowski, Bridgewater, NJ (US);
Agere Systems, Inc., Miami Lakes, FL (US);
Abstract
A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region and the i region which substantially decreases the capacitance of the PIN photodiode such that the photodiode bandwidth is maximized. Typically, the buffer region is formed as a layer of indium phosphide that is at least approximately 0.5 &mgr;m in thickness.