The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Nov. 02, 1998
Yasuo Yamashita, Mito, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In order to provide an ion implanter which can process the material in high accuracy by preventing charge up of the material, in an ion implanter comprising an ion source for generating an ion beam, a mass separator for separating and emitting only a necessary ion seed from said ion beam, a post acceleration tube for accelerating said ion bean emitted so as to have energy necessary for an ion implanting, a quadrupole lens department for shaping said accelerated ion beam to have a suitable shape for being implanted to, an ion deflection department for isolating and removing beam components being neutral electrically from said shaped ion beam, and an ion implanting room for implanting said ion to said material by implanting said ion beam that neutral beam components are removed, at least a post acceleration tube holds its high vacuum degree, and vacuum degree of the ion implanting room is held to generate a beam plasma.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile