The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Jun. 30, 1999
Masanobu Hatanaka, Aichi, JP;
Naoyuki Takada, Kanagawa, JP;
Motoshu Miyajima, Kanagawa, JP;
Shuichi Miyata, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
The present invention relates to a semiconductor device manufacturing method containing the step of polishing an insulating oxide film having an uneven surface, to improve a throughput in burying the insulating film into trenches and also improve flatness of a polished surface. The method comprises a step of forming a polishing stopping film,on a surface of a semiconductor substrate,, a step of forming trenches,to,by etching the semiconductor substrate,via the opening portions, a step of forming an insulating film,in the trenches,to,and on the semiconductor substrate,, and steps of first polishing the insulating film by using a first abrasive cloth,which has a polishing surface with first hardness while supplying a first slurry onto a polished surface of the insulating film,and then polishing the polished surface of the insulating oxide film,by using a second abrasive cloth,which has second hardness softer than the first hardness while supplying a second slurry onto the polished surface of the insulating film,until the polishing stopping film,is exposed.