The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Sep. 30, 1999
Applicant:
Inventor:
Anil Justin Vijayendran, Campbell, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
Tungsten nitride adhesion to an underlying dielectric is enhanced by forming a thin layer of silicon over the dielectric before depositing the tungsten nitride. A twenty angstrom layer of amorphous silicon is formed over a silicon oxide dielectric. Tungsten nitride is formed over the silicon layer using a plasma enhanced chemical vapor deposition with tungsten hexafluoride and nitrogen. As the tungsten nitride is formed, the tungsten hexafluorine and nitrogen reacts with the amorphous silicon to produce an adhesion layer that includes silicon nitride and tungsten silicide.