The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Feb. 24, 2000
Applicant:
Inventors:
Alex A. Behfar, Poughquag, NY (US);
Kris V. Srikrishnan, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/130 ;
Abstract
A method of forming multiple SOI wafers from a plurality of individual wafers each having a first side and a second side. The method includes forming an oxide surface on the first side on each of the plurality of individual wafers and forming a hydrogen rich region at a preselected depth on the second side on each of the plurality of individual wafers. The wafers are then bonded into a stacked configuration and heat treated to fracture the wafers at the hydrogen rich regions. This fracture forms at least two SOI wafers.