The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2001
Filed:
Feb. 15, 2001
Applicant:
Inventors:
Timothy A. Rost, Plano, TX (US);
Kenneth C. Harvey, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface, and a gate electrode, preferably of doped polysilicon, over the partially fabricated device. Deuterium is implanted into the structure and the deuterium is caused to diffuse through the device. The device fabrication is then completed.