The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2001

Filed:

Apr. 11, 2000
Applicant:
Inventors:

Carmelo Condemi, Gravina di Catania, IT;

Michele La Placa, Gravina di Catania, IT;

Ignazio Martines, Catania, IT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/600 ;
U.S. Cl.
CPC ...
G11C 1/600 ;
Abstract

A reading circuit for nonvolatile memory cells, including a current-to-voltage converter, having an array load, connected to a memory cell, and a reference load connected to a reference generator. The array load and the reference load include PMOS transistors presenting an array shape factor (W/L),and, respectively, a reference shape factor (W/L),. The reading circuit further includes a charge pump that supplies a biasing voltage to a gate terminal of the memory cell. The biasing voltage is proportional to and higher than a supply voltage V,. The ratio between the array shape factor (W/L),and the reference shape factor (W/L),is a non-integer.


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