The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Nov. 02, 1998
Applicant:
Inventor:
Hyun-Sik Seo, Kyongki-do, KR;
Assignee:
LG LCD, Inc., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulating layer on the substrate and covering the gate electrode, an active layer on the gate insulating layer, an ohmic contact layer on the active layer and not overlapping the gate electrode, and a source electrode and a drain electrode connected to the ohmic contact layer. Each of the source electrode and the drain electrode has a double-layered structure of a first metal layer having tensile stress and a second metal layer having compressive stress.