The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Sep. 13, 1999
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/362 ; H01L 2/976 ;
Abstract
Plural grooves are formed in a main surface of semiconductor layers on semiconductor substrate, and gate layers connected to a gate electrode are formed in the plural grooves through a gate insulating film, and then a body diffusion layer is formed between the gate layers, and afterwards, a source diffusion layer connected to a source electrode and a source diffusion layer connected to a source electrode are formed in an identical process.