The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Jan. 20, 2000
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure.