The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Sep. 28, 1999
Applicant:
Inventors:
Timothy J. Gillespie, Littleton, CO (US);
Craig H. Marshall, Littleton, CO (US);
Bruce R. Lanning, Littleton, CO (US);
Assignee:
Lockheed Martin Corporation, Bethesda, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/100 ;
U.S. Cl.
CPC ...
H01L 3/100 ;
Abstract
Provided is a method for making layers of I-III-VI semiconductor materials for use in photovoltaic cells, and particularly for making CIS and variations on CIS, such as CIGS and CIGSS. The method includes formation of a plurality of precursor films of the elemental components and at least one final heat treatment step in which the final semiconductor material is formed, with the precursor film for at least one III component being deposited prior to any precursor film including the I component.