The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Feb. 26, 2001
Masanori Mayusumi, Annaka, JP;
Masato Imai, Annaka, JP;
Kazutoshi Inoue, Maebashi, JP;
Shinji Nakahara, Takasaki, JP;
Silicon Crystal Research Institute Corp., Annaka, JP;
Abstract
Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer prior to loading of the wafer into an eptaxial growth furnace, removing the protective oxide film formed on the surface of the wafer by heating after the wafer is loaded in the furnace, and performing epitaxial growth of the epitaxial layer on the surface from which the protective oxide film is removed in the furnace. The protective oxide film is removed by heating the wafer in the furnace in an ambience of hydrogen gas at a pressure ranging from 0.0133×10,Pa to 1.013×10,Pa and at a temperature ranging from 800° C. to 1,000 ° C., or by heating the wafer in the furnace at a pressure of 5×10,Pa or under and at a temperature ranging from 800° C. to 1,000° C.