The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Jul. 28, 2000
Ko Noguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor device comprising a first level insulator film formed on a silicon substrate, a first level wiring conductor formed on the first level insulator film, and a second level insulator film formed to cover the first level wiring conductor and the first level insulator film, openings are formed in the second level insulator film, and second level wiring conductors are formed to fill up the openings. The openings including a through-hole type opening and at least two groove type openings having different depths, and the through-hole type opening extends through one of the at least two groove type openings to reach the first level wiring conductor. The grooved wiring conductors having different film thicknesses are provided in the same wiring conductor level.