The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Nov. 06, 1998
Kensuke Okonogi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An insulation film is formed on a first single crystal silicon substrate, e.g., a hydrogen anneal substrate, an intrinsic gettering substrate and an epitaxial substrate. Hydrogen implantation is carried out from a surface of this insulation film, thereby forming a hydrogen implantation region in the first single crystal silicon substrate. Then, by carrying out a thermal treatment at 400 to 500° C., voids are formed in the hydrogen implantation region, and the first single crystal silicon substrate is cleaved therefrom. Next, the surface of the insulation film and a surface of a second single crystal silicon substrate are laminated and then, they are subjected to a thermal treatment at 1,000° C. or higher. With this method, the adverse influence, on a device, of defects in the substrate can be reduced and a yield can be enhanced.