The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Mar. 03, 1999
Tamotsu Ogata, Tokyo, JP;
Junichi Tsuchimoto, Tokyo, JP;
Yutaka Inaba, Tokyo, JP;
Kiyoshi Mori, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
After a bottom electrode,of a capacitor is formed, a nitride film as an insulating film,of the capacitor is formed on the bottom electrode,by CVD. Then, the insulating film,is wet-oxidized at a temperature in a range of 700° C. to 760° C. Finally, a top electrode,of the capacitor is formed on the insulating film,The insulating film,forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile