The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Oct. 19, 1999
Kyung-ho Hyun, Kyungki-do, KR;
Byung-soo Koo, Kyungki-do, KR;
Wook-sung Son, Seoul, KR;
Chang-jip Yang, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor device capacitor has a storage electrode wherein the impurity concentration decreases from the bottom to the top thereof. The semiconductor device capacitor is formed on a lower structure of a semiconductor substrate burying a contact hole formed on the semiconductor substrate. The impurity concentration linearly or non-linearly decreases going upward from the bottom of the contact hole to the top of the storage electrode. A method of manufacturing the semiconductor device capacitor also provides that the storage electrode is formed such that the concentration of impurities decreases linearly or non-linearly going upward from the bottom toward the top.