Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby

Abstract

The present invention provides a method of forming a metal oxide metal (MOM) capacitor on a substrate, such as a silicon substrate, of a semiconductor wafer in a rapid thermal process (RTP) machine. The MOM capacitor is fabricated by forming a metal layer on the semiconductor substrate. The metal layer is then subjected to a first rapid thermal process in a substantially inert but nitrogen-free atmosphere that consumes a portion of the metal layer to form a first metal electrode layer and a silicide layer between the first metal electrode and the semiconductor substrate. The semiconductor wafer is then subjected to a second rapid thermal process. During this process, the remaining portion of the metal layer is oxidized to form a metal oxide on the first metal electrode, which serves as the dielectric layer of the MOM capacitor. Following the formation of the dielectric layer, a second metal electrode layer is then conventionally formed on the metal oxide, which completes the formation of the MOM capacitor. Preferably, the first electrode layer and the metal oxide layer are formed in a single RTP machine.