The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2001

Filed:

May. 22, 2000
Applicant:
Inventor:

Robert W. Cohn, Louisville, KY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 ; G02B 5/18 ;
U.S. Cl.
CPC ...
G03F 7/00 ; G02B 5/18 ;
Abstract

The placement accuracy and resolution of direct-write patterning tools, in particular the atomic force microscope (AFM), is considered for application to fabricating multi-passband integrated optical filters. Because of its simpler fabrication a grating structure is proposed that consists of identical stripes that are non-periodically spaced. The recently developed pseudorandom encoding method from the field of computer generated holography is modified to effectively assign analog reflectances at each point along the grating by selective withdrawal and offsetting of the stripes from a periodic spacing. An example filter designed by this method has two 1.5 nm bandwidth passbands and −23 dB of rejection for lightly coupled stripes. As with single band filters, the passbands broaden as the coupling increases. A calculation of the coupling coefficient of stripes on a fundamental mode, slab waveguide indicate that stripes on the order of 100 nm in depth and width support low insertion loss, multipassband filtering applications at visible wavelengths. Lines of these dimensions patterned with an AFM on (110) silicon indicate the feasibility of fabricating these filters. These conclusions are specific to current AFMs that are limited to writing fields of 100 &mgr;m. Increased rejection and decreased passband widths will result from incorporating precise field-stitching into future AFMs.


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