The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Dec. 28, 1999
Applicant:
Inventors:
Masaaki Kamiya, Chiba, JP;
Yutaka Saitoh, Chiba, JP;
Assignee:
Interchip Corporation, Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/993 ; H01L 2/994 ; H03B 5/36 ;
U.S. Cl.
CPC ...
H01L 2/993 ; H01L 2/994 ; H03B 5/36 ;
Abstract
A MOS-type capacitor includes a semiconductor substrate of a first conductive type serving as a first electrode, a conductor layer formed on the semiconductor substrate via a capacitive insulation film and serving as a second electrode, and an impurity region of a second conductive type formed in the vicinity of the surface of the semiconductor substrate at a location in proximity to a region facing the conductor layer. The MOS-type capacitor is used as a variable capacitor in a VCO (voltage-controlled oscillator) having a widened frequency range.