The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Jul. 12, 2000
Arul Balasubramaniyan, Round Lake, IL (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A dual FET differential voltage controlled attenuator includes a first voltage controlled FET transistor (M,), corresponding to a first control voltage terminal, and a second voltage controlled FET transistor (M,), corresponding to a second control voltage terminal. The first voltage controlled FET transistor attenuates a voltage at an attenuator output by regulating current through a first resistor (R,) connected between an attenuator output and a voltage supply node (Vcc), and the second voltage controlled FET transistor attenuates the voltage at the attenuator output by regulating current through a second resistor (R,) connected between the attenuator output and the voltage supply node. The first and second voltage controlled FET transistors attenuate the voltage at the attenuator output by generating differential currents in the first and second resistors, the differential currents giving a linear transfer function from an attenuator input to the attenuator output of the dual FET differential voltage controlled attenuator.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile