The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Nov. 08, 1999
Fariborz Assaderaghi, Mahopac, NY (US);
Harold Wayne Chase, Cedar Park, TX (US);
Stephen Larry Runyon, Pflugerville, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A capacitor structure (,) is implemented in an integrated circuit chip (,) along with other devices at the device level in the chip structure. The capacitor structure includes an elongated device body (,) formed from a first semiconductor material. This device body (,) is bordered on both lateral sides by lateral regions (,) formed from a second semiconductor material. A dielectric layer (,) overlays both lateral regions (,) and the device body (,), while an anode layer (,) overlays the dielectric layer in an area defined by the device body. Each lateral region (,) is coupled to ground at a first end (,) of the elongated device body (,). The anode (,) is coupled to the chip supply voltage at a second end (,) of the device body opposite to the first end. The entire structure is designed and dimensioned to form an area-efficient and high-frequency capacitor.