The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Apr. 29, 1999
Applicant:
Inventors:
Assignee:
Matsushita Electronics Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/974 ; H01L 2/362 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 2/974 ; H01L 2/362 ; H01L 3/1113 ;
Abstract
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage is applied to the second high-concentration layer. A conductive layer provides an electrical connection between the first high-concentration layer and an input pad for inputting an input signal to an input circuit or input/output circuit. A first low-concentration layer of the second conductivity type is formed in the region of the semiconductor substrate immediately underlying the first high-concentration layer.