The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Jun. 23, 1999
Applicant:
Inventor:
Khanh Q. Tran, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1469 ;
Abstract
Spacings between metal features are gap filled with HSQ. Portions of the deposited HSQ adjoining the side surfaces and upper surface of a metal feature are selectively heated to increase the density and etch resistance of the adjoining HSQ portions, thereby enabling formation of reliable, voidless, low resistance, borderless vias. In an embodiment of the present invention, selective heating is effected by heating a metal line to indirectly heat the adjoining portions of the HSQ layer, as by infrared heating.