The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2001

Filed:

Jan. 19, 2000
Applicant:
Inventors:

Ichiro Mihara, Tachikawa, JP;

Osamu Kuwabara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; B05D 5/12 ; B05C 1/00 ; G03F 9/00 ; G03F 7/12 ; G03C 5/00 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; B05D 5/12 ; B05C 1/00 ; G03F 9/00 ; G03F 7/12 ; G03C 5/00 ;
Abstract

A resin sealing film is formed on a silicon substrate by using a printing mask and a squeegee. The side surface in the tip portion of the squeegee is substantially V-shaped, and the printing is performed by pushing the tip portion of the squeegee into the gap between adjacent bump electrodes. As a result, the sealing film is formed in a manner to be depressed in the region between adjacent bump electrodes so as to facilitate the swinging movement of the bump electrodes. It follows that, in a temperature cycle test performed after the silicon substrate is mounted to a circuit substrate, the stress derived from the difference in thermal expansion coefficient between the silicon substrate and the circuit substrate is absorbed by the bump electrode.


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