The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Apr. 07, 2000
Tatsuya Usami, Tokyo, JP;
Hidenobu Miyamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
According to a fabrication method of a semiconductor device, differing areas of metal interconnect layers,and,are formed on top of interlayer base layer,. An HSQ layer,is then deposited over them. A plasma SiO,is then deposited on top of the HSQ film,. Afterwards, the top surface of the plasma SiO,film,is subjected to the CMP process so that its surface can be smoothed. A photoresist film,is deposited on top of the SiO,film,and then patterned for a subsequent step of making via holes. Afterwards, the insulation film,and HSQ film,are selectively etched so as to dig via holes,so that the bottoms,of the via holes,respectively end at the top surfaces of the interconnect layers,and,. This etching is performed using a mixture of a fluorine-based gas and a hydrogen-based gas.