The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2001
Filed:
Oct. 25, 1999
Ray Dils, Vancouver, WA (US);
Robert D. Meadows, Portland, OR (US);
Sekidenko, Inc., Vancouver, WA (US);
Abstract
A method for controlling the temperature of a growing semitransparent layer (,) during a production deposition process on a major surface of a production wafer (,). During the production process heat is applied to the wafer by an intensity adjustable heat source (,) and the production wafer emits a broad spectrum of light. In the method a test deposition process is performed using a set of infrared wavelengths of the light emitted from a test wafer to determine a set of test parameter values including temperature values over time for the test growing layer. The production deposition process is then performed and the intensity of infrared light emissions from the wafer are measured to form a set of production infrared light intensity values at the same test run set of infrared wavelengths used in the test deposition. The production infrared light intensity values and the set of test parameter values are used to compute an error correction value that is used to correct the intensity of the heat source during the production deposition.