The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Sep. 11, 1998
Kazunori Asano, Tokyo, JP;
Kouji Ishikura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device of the present invention includes ohmic source plate electrodes, gate plate electrodes, and drain plate electrodes in parallel from each other in a heat generating region various designs are used to more evenly distribute heat generated in the semiconductor device. A first example has gold-plate electrodes formed on the respective source and drain plate electrodes in parallel with the ohmic plate electrodes. The gold-plate electrode arranged at the central portion of the heat generating region plate electrodes has the widest width and gold-plate electrodes arranged toward the center portion to the peripheral portion of the heat generating region narrow gradually. By the structure mentioned above, the semiconductor device of the present invention has uniform temperature distribution in a heat generating region. A second example uses a plurality of stripe plates perpendicular to the ohmic plate electrodes. Those stripe plates are of varying separation distances, being closer at the center of the heat generating region. A third example varies the thickness of the semiconductor substrate inversely proportional to the distance from the center of the heat generating region.