The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Aug. 28, 1998
Applicant:
Inventors:
Adele E. Schmitz, Newbury Park, CA (US);
Julia J. Brown, Santa Monica, CA (US);
Assignee:
Hughes Electronics Corporation, El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract
A semiconductor passivation technique uses a plasma enhanced chemical vapor deposition (PECVD) process to produce a silicon-rich nitride film as a passivation layer on a Group III-V semiconductor device. The silicon-rich film has a nitrogen to silicon ratio of about 0.7, has a relatively high index of refraction of, for example, approximately 2.4, is compressively stressed, and is very low in hydrogen and oxygen content.