The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
May. 04, 2000
Applicant:
Inventor:
Hideaki Nagaoka, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A memory cell power supply circuit includes: a memory cell power supply PMOS transistor connected between a power supply node and a power supply potential, a diode-connected transistor provided between a gate of the memory cell power supply transistor and the power supply potential, and a resistor provided between the gate of the memory cell power supply transistor and a ground potential. During a writing operation when a value of current flowing to the memory cell is high, if the power supply potential increases, a cell power supply potential down-converted by a greater amount is supplied to the memory cell.